NREL unveiled a breakthrough power module called ULIS in early 2026 based on which type of semiconductor material?

The National Renewable Energy Laboratory (NREL) recently unveiled its Ultra-Low Inductance Smart (ULIS) power module, a significant advancement in power electronics that relies on silicon carbide semiconductors. This choice of material is crucial because silicon carbide (SiC) offers substantial performance benefits over traditional silicon, which has largely reached its inherent limitations for high-power applications.

Silicon carbide is a wide-bandgap semiconductor, meaning it can operate efficiently at higher voltages, temperatures, and switching frequencies than conventional silicon. These superior properties allow SiC devices to achieve greater power density, reduce energy losses during power conversion, and dissipate heat more effectively. For the ULIS module, this translates into a design that can deliver five times the energy density of previous modules while being significantly smaller and lighter. Furthermore, ULIS boasts a remarkable seven to nine times reduction in parasitic inductance compared to other state-of-the-art silicon carbide modules, enhancing its efficiency even further.

The development of the ULIS power module, with its silicon carbide foundation (Review), is particularly important given the escalating global demand for electricity. Industries such as AI-driven data centers, advanced manufacturing, and electrified transportation are placing unprecedented strain on existing power grids. NREL's breakthrough helps address this by enabling more efficient and reliable conversion and delivery of electricity, essentially allowing more usable power to be extracted from current energy supplies. This technology is poised to revolutionize various sectors, from electric vehicles and grid infrastructure to defense and aviation, by providing more compact, efficient, and robust power electronics solutions.